2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features

The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an …

View 2N3055 datasheet for technical specifications, dimensions and more at DigiKey.

2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. It is an NPN (negative-positive-negative) transistor with a maximum collector …

Jan 19, 2025 · The 2N3055 is a power bipolar transistor designed to handle high power loads in the range of 100 V, and 15 amps. In this post I will comprehensively discuss the pinout function, …

Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 2. Active Region Safe Operating Area. There are two …

The 2N3055 is a classic NPN power bipolar junction transistor widely used in linear and switching applications. Built in a TO3 metal package, it offers high durability and effective heat dissipation, …

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

Nov 5, 2018 · 2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general …

Order today, ships today. 2N3055 – Bipolar (BJT) Transistor NPN 70 V 15 A 6 W Through Hole TO-3 from Microchip Technology. Pricing and Availability on millions of electronic components from Digi …